FERROELECTRIC MEMORY ARRAY

摘要

A ferroelectric memory array capable of reliably and nondestructively reading out a stored logical value from only a selected memory cell without being affected by other memory cells. When connecting a drain (13) of each ferroelectric gate field effect transistor Fij to drain wiring, the drain (13) is connected via drain wiring Dk to a drain (13) of one or more ferroelectric gate electric field effect transistors selected from ferroelectric gate electric field effect transistors other than the ferroelectric gate electric field effect transistor having a source (12) connected to a source wiring Bj which is connected to the local source (12) and other than the ferroelectric gate electric field effect transistor having a gate electrode (15) connected to a gate wiring Ai which is connected to the local gate electrode (15).