METHOD OF FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE USING SPACER MADE OF UNDOPED POLYSILICON LAYER

摘要

PURPOSE: A method of forming a contact hole of a semiconductor device is provided to secure a process margin of a contact hole and a short margin and to fill effectively a metal film in the contact hole by using a spacer made of an undoped polysilicon layer. CONSTITUTION: A plurality of first interlayer dielectric patterns are formed on a semiconductor substrate(10). An undoped polysilicon layer is formed on the resultant structure. A spacer(20) is formed at both sidewalls of the first interlayer dielectric pattern by performing an etch-back process on the undoped polysilicon layer. A second interlayer dielectric(22) is formed on the resultant structure. A contact hole(25) for exposing the substrate to the outside is formed by etching selectively the second interlayer dielectric. The width of the contact hole is enlarged by removing the remaining second interlayer dielectric from the contact hole using wet-etching.