| 摘要 |
PROBLEM TO BE SOLVED: To effectively form an amorphous thin film having a low impurity content on a substrate, without requiring high-speed annealing treatment or complicated cleaning treatment. SOLUTION: The manufacturing method of a semiconductor device has a deposition process and a reforming process. In the deposition process, deposition gas from a deposition raw material supply unit 9 is supplied into a reaction chamber 1 from a shower head 6 and an amorphous thin film, comprising a hafnium oxide film (HfO<SB>2</SB>film) is formed on a rotating substrate 4. In the reforming process, radical produced in a reactant activating unit 11 is supplied from the shower head 6, which is the same as that for supplying the deposition gas and a specific element which is to become an impurity, in a film formed in the deposition process, is removed. The semiconductor device is formed by consecutively repeating the deposition process and the reforming process a plurality of number times by a control device 25 inside the same reaction chamber 1. COPYRIGHT: (C)2004,JPO
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