| 摘要 |
A flash memory array and related method for programming, erasing, and reading. The memory includes: a plurality of memory cells, each memory cell having a gate, a drain, a source, and a body; a plurality of word lines and body lines. The bodies of the memory cells whose gates are connected to a same word line are connected to a same body line, and the body lines are isolated from each other such that different body lines can be driven to have different voltages. When the memory programs, erases, and reads data, the different body lines are driven to different voltage.
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