| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor element equipped with a heat spreader that can excellently radiate heat generated from the semiconductor element, can improve both the mounting reliability of the semiconductor device and the junction reliability of a heat radiating fin, and is improved in adaptability to a semiconductor element, particulaly, to a semiconductor element which is highly reduced in power consumption, and to provide a semiconductor package. <P>SOLUTION: The heat spreader 2 composed of a diamond layer or a ceramic layer made of a silicon carbide, aluminum nitride, etc., and having high thermal conductivity and light transmittancy is directly joined to the rear surface of the semiconductor element 1 or an optical semiconductor element which is highly reduced in power consumption. The heat spreader 2 is formed directly on a silicon wafer which becomes the substrate of the spreader 2 or a chip to cover the wafer or chip before, during, or after a semiconductor element manufacturing process. <P>COPYRIGHT: (C)2004,JPO</p> |
