| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device having an insulating film whose relative dielectric constant is sufficiently low. <P>SOLUTION: This semiconductor device is provided with a semiconductor substrate (1), a porous insulating film (2) formed on the semiconductor substrate and constituted of first insulating materials whose relative dielectric constant is 2.5 or less, and at least either (6) a plug or a wiring layer buried in the porous insulating film. At least a portion of a pore (3) in the porous insulating film is provided with a layer (4) constituted of second insulating materials different from the first insulating materials on the internal wall. <P>COPYRIGHT: (C)2004,JPO</p> |
