| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of forming a source/drain diffused layer or an impurity diffused layer with proper controllability. SOLUTION: This semiconductor device comprises a gate electrode 6b, a channel doped layer 5, a source/drain diffused layer 9, and an impurity diffused layer 8 where the gate electrode 6b has a gate insulated film 7 formed on a semiconductor substrate, a lower surface coming into contact with the gate insulated film 7, an upper surface which is wider than the lower surface, and a side surface between the lower surface and the upper surface comprising a flat slop side surface having a constant angle of inclination on at least the lower surface side of the side surface. The channel doped layer 5 is formed by implanting a first impurity in the semiconductor substrate directly under the gate insulated film. The source/drain diffused layer 9 is formed by implanting a second impurity in a self-aligned manner with the wider upper surface side out of the gate electrode 6b as a mask. The impurity diffused layer 8 is formed by obliquely implanting a third impurity in a self-aligned manner with the lower surface side out of the gate electrode 6b as a mask, and the impurity diffused layer 8 is obliquely implanted with proper reproducibility. COPYRIGHT: (C)2004,JPO
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