HALFTONE PHASE SHIFT MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE MASK

摘要

PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank having a plurality of semitransparent film layers having controlled phases and transmittances with respect to exposure beams on a transparent glass substrate, in which the transparency of a semitransparent shifter layer can be increased in accordance with shorter wavelengths of the exposure light source and a defect produced in the semitransparent shifter layer can be repaired (by laser repairing) when the layer is irradiated with laser light in the wavelength range from 200 nm to 500 nm in a repairing apparatus.

SOLUTION: The halftone phase shift mask blank features that when at least one film layer in the films constituting the semitransparent film layer comprises a semitransparent film having≤0.1 extinction coefficient at any wavelength in the range from 200 to 500 nm, the semitransparent layers vertically adjacent to the above semitransparent layer have extinction coefficients larger by a specified value or more at any wavelength in the range from 200 to 500 nm compared to the above extinction coefficient.

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