| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the heat radiating performance from the back face of a silicon chip, to improve heat radiating performance from a semiconductor device including a silicon chip, and to stably cool a semiconductor device, and to perform a stable operation. <P>SOLUTION: High radiation painting constituted of a binder solid content 100 pts. mass and heat absorption pigment 10 to 150 pts. mass is painted on the back face of a silicon wafer, and a metal plate treated with high heat radiation painting is adhered to the back face of the silicon wafer. It is desired that an integrated circuit is formed on the silicon wafer, and then the high heat radiation painting or high heat radiation painting metal plate adhering is preferable in a process prior to dicing. <P>COPYRIGHT: (C)2004,JPO</p> |
