发明名称 |
PROCESS FOR DEPOSITING METALLIC LAYER ON SURFACE OF SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a process for forming a metallic thin film on the surface of a substrate wherein a chemical adsorption layer excellent in shape followability is obtained. SOLUTION: The process for forming the metallic layer on the surface of the substrate comprises a step wherein a metal halide layer is formed from a halogen-containing precursor and a metal-containing precursor on at least part of the surface and a step wherein the metal halide layer is exposed to a reducing agent to yield the metallic layer. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004156141(A) |
申请公布日期 |
2004.06.03 |
申请号 |
JP20030375645 |
申请日期 |
2003.11.05 |
申请人 |
AIR PRODUCTS & CHEMICALS INC |
发明人 |
NORMAN JOHN A T;ROBERTS DAVID ALLEN;BOZE MELANIE ANNE |
分类号 |
C23C16/14;C23C10/60;C23C16/08;C23C16/18;C23C16/30;C23C16/56;C23C26/00;H01L21/285;H01L21/768;(IPC1-7):C23C16/14 |
主分类号 |
C23C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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