发明名称 PROCESS FOR DEPOSITING METALLIC LAYER ON SURFACE OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a process for forming a metallic thin film on the surface of a substrate wherein a chemical adsorption layer excellent in shape followability is obtained. SOLUTION: The process for forming the metallic layer on the surface of the substrate comprises a step wherein a metal halide layer is formed from a halogen-containing precursor and a metal-containing precursor on at least part of the surface and a step wherein the metal halide layer is exposed to a reducing agent to yield the metallic layer. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004156141(A) 申请公布日期 2004.06.03
申请号 JP20030375645 申请日期 2003.11.05
申请人 AIR PRODUCTS & CHEMICALS INC 发明人 NORMAN JOHN A T;ROBERTS DAVID ALLEN;BOZE MELANIE ANNE
分类号 C23C16/14;C23C10/60;C23C16/08;C23C16/18;C23C16/30;C23C16/56;C23C26/00;H01L21/285;H01L21/768;(IPC1-7):C23C16/14 主分类号 C23C16/14
代理机构 代理人
主权项
地址