| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for a resist lower layer film excellent in storage stability for obtaining a resist lower layer film which suppresses resist peeling, improves reproducibility of a pattern, and has alkali resistance and resistance to oxygen ashing in resist removal, by disposal under a resist. <P>SOLUTION: The composition for a resist lower layer film comprises (A) a hydrolysis condensation product of an alkoxysilane including a compound of the formula Si(OR<SP>2</SP>)<SB>4</SB>, wherein four symbols R<SP>2</SP>may be the same or different and are each a monovalent organic group, and (B) a hydrolysis condensation product of an alkoxysilane including at least a compound of the formula R<SP>1</SP><SB>n</SB>Si(OR<SP>2</SP>)<SB>4-n</SB>, wherein a plurality of symbols R<SP>1</SP>may be the same or different and are each a monovalent organic group or H; a plurality of symbols R<SP>2</SP>may be the same or different and are each a monovalent organic group; and n is an integer of 1-2. <P>COPYRIGHT: (C)2004,JPO |
