发明名称 METHOD FOR STRIPPING RESIST AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To easily strip a resist having a surface hardened layer in a short period of time without damaging other layers or producing dust. SOLUTION: The method for stripping a resist is carried out by irradiating the surface of a resist 3 with ultrashort pulse laser light 20 to strip at least a part of the surface hardened layer 9 by ablation or by converging ultrashort pulse laser light 20 onto above the surface hardened layer 9 to induce dielectric breakdown in the atmosphere to generate shock waves and to produces cracks 21 in the surface hardened layer 9 by the shock waves. The exposed resist 9 is stripped by ashing or with a resist stripping liquid in a supercritical fluid. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004157424(A) 申请公布日期 2004.06.03
申请号 JP20020324628 申请日期 2002.11.08
申请人 SONY CORP 发明人 MURAMOTO JUNICHI
分类号 G03F7/42;H01L21/027;H01L21/302;(IPC1-7):G03F7/42 主分类号 G03F7/42
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