| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser device of high reliability, long life and high power whose oscillation wavelength is at least 760 nm but no more than 800 nm. SOLUTION: In the laser device, an AlGaAs lower guide layer 105, an InGaAsP multiplex distortion quantum well active layer 107, and an AlGaAs upper guide layer 109 are laminated on a GaAs substrate 101. An AlGaInAs upper interface protective layer 108 is arranged between the layer 107, and the layer 109. An AlGaInAs lower interface protective layer 106 is arranged between the layer 107 and the layer 105. As a result, reproduction of crystal defects from interface between the upper and the lower guide layers 109, 105 to the multiplex distortion quantum well active layer 107 is restrained. COPYRIGHT: (C)2004,JPO
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