SEMICONDUCTOR DEVICE HAVING ELEVATED DEVICE ISOLATION STRUCTURE AND PRODUCTION METHOD THEREFOR

摘要

A semiconductor device using an SOI substrate having an elevated device isolation structure, comprising a bird's beak unit, where the thickness of a gate insulation film is gradually increases from a device center side toward a device isolation end, disposed at the end in contact with a device isolation area on a section being orthogonal to a channel current direction and including the gate electrode. The semiconductor device is excellent in characteristics such as resistance against antenna damage subjected to in the post-process, gate leak current, TDDB characteristics, and Vth (threshold voltage) controllability by Vsub (substrate potential).