发明名称 EUV EXPOSURE METHOD, EUV EXPOSURE SYSTEM AND EUV EXPOSURE SUBSTRATE
摘要 <p>A photosensitive substrate (4) comprises a resist layer (2) formed on a wafer (3) and a gas emission preventing layer (1) formed on the resist layer (2). In order to form such a photosensitive substrate (4), firstly a resist is applied onto a wafer (3) using a resist application apparatus, and then dried to form a resist layer (2). Next, a gas emission preventing layer (1) is formed on the resist layer (2) by a sputtering method. When an exposure is carried out using a photosensitive substrate (4) having such a gas emission preventing layer (1), emission of a gas from the resist layer (2) can be effectively suppressed. Consequently, a carbon layer is not formed on surfaces of optical system components such as a multilayer-film reflection mirror even when the exposure is carried out for a long time, and thus deterioration in the reflectance can be prevented.</p>
申请公布号 WO2004047155(A1) 申请公布日期 2004.06.03
申请号 WO2003JP14620 申请日期 2003.11.18
申请人 MURAKAMI, KATSUHIKO;NIKON CORPORATION 发明人 MURAKAMI, KATSUHIKO
分类号 G03F7/11;G03F7/20;(IPC1-7):H01L21/027 主分类号 G03F7/11
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