| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, the semiconductor device including a fuse structure in which the power is turned off by melting with laser radiation when a faulty cell is repaired. <P>SOLUTION: The semiconductor device is divided into a peripheral circuit region having a fuse region and a cell region where a lower structure is formed with a transistor and a capacitor formed on a bit line. Further, a window film is positioned on the top of the fuse region and a fuse pattern film and a buffer pattern film are positioned below the window film. The fuse pattern film is provided by performing the same steps as those of forming a metal wiring, and the buffer pattern film is provided by performing the same steps as those of forming the upper electrode of the bit line and the capacitor. In this way, the fuse structure can be provided through simple steps. <P>COPYRIGHT: (C)2004,JPO |
