| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a transfer electron beam exposure system that reduces the distortion and deformation of a wafer while the wafer is exposed. <P>SOLUTION: The electron beam exposure system is provided with an electron beam source 14 which outputs an electron beam 15, masks 30 and 60 which have the openings corresponding to the patterns to be exposed and upon which the beam 15 is projected, and a stage 44 which holds the wafer 40. The system successively exposes a plurality of patterns two-dimensionally disposed on the wafer 40 by projecting the electron beam 15 upon the wafer 40 through the masks 30 and 60. The system exposes the two-dimensionally disposed patterns to the beam 15 so that continuously exposed two rows of patterns may not adjoin each other by exposing the patterns one row by one row. <P>COPYRIGHT: (C)2004,JPO</p> |
