| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which occurrence of disclination due to a difference in level at a contact part or between pixel electrodes is prevented and a method for fabricating the same. SOLUTION: The method for fabricating the semiconductor device is provided with a step to form an insulating film 2 on electrodes 1a, 1b so as to cover the electrodes, a step to form contact holes 2a, 2b located on the electrodes and recessing parts 2c, 2d connected to the contact holes on the insulating film 2, a step to fill in the contact holes and the recessing parts with a conductive film 8 and form the conductive film 8 on the insulating film and a step to form the pixel electrodes composed of insulating films 8a, 8b filled in the contact holes and in the recessing parts by subjecting the conductive film to chemical mechanical polishing (CMP) or to etching back. COPYRIGHT: (C)2004,JPO |
