发明名称 APPARATUS AND METHOD FOR TREATING GAS
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and method for treating gas, capable of suppressing an effect of particles on a substrate to be treated, without causing complexity in mechanisms. SOLUTION: The apparatus comprises a chamber 1, having a transfer region 5 for transferring a substrate G and a treatment region 6 for giving a predetermined gas treatment to the substrate G, a substrate holder 11 for holding the substrate G in the chamber 1; a moving mechanism 20 for moving the substrate holding base 11 between a giving position for giving the substrate G with its surface to be treated facing upward in the transfer region 5 in the chamber 1 and a treatment position with its surface to be treated of the substrate G, facing a direction other than the upward direction, in the treatment region 6 in the chamber 1; process gas supply mechanisms 34 and 31 for supplying the process gas in the treatment region 6 in the chamber 1; and treatment mechanisms 36 and 40 for subjecting the substrate G in the treatment region 6 to a predetermined gas treatment. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004158781(A) 申请公布日期 2004.06.03
申请号 JP20020325272 申请日期 2002.11.08
申请人 TOKYO ELECTRON LTD 发明人 AMANO KENJI
分类号 H01L21/3065;H01L21/677;H01L21/68;H01L21/683;(IPC1-7):H01L21/68;H01L21/306 主分类号 H01L21/3065
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