FIELD EFFECT TRANSISTOR STRUCTURE, ASSOCIATED SEMICONDUCTOR STORAGE CELL, AND CORRESPONDING PRODUCTION METHOD

摘要

The invention relates to a field effect transistor structure, an associated semiconductor storage cell, and a corresponding production method. A diode-doping area (4) within a semiconductor substrate (1) is embodied with a field effect transistor structure (S/D, 3, K) while an electrically conducting diode-connecting layer (5) connects a control layer (3) of the field effect transistor structure to the diode-doping area (4) so as to create a diode (D), whereby excess charge carriers (L) in the semiconductor substrate (1) can be eliminated such that an undesired body effect is prevented.