METHOD FOR FORMING DRAM CELL HAVING STORAGE NODE

摘要

PURPOSE: A method for forming a DRAM(Dynamic Random Access Memory) cell having a storage node is provided to be capable of increasing the margin degree for a cleaning process before a storage node layer depositing process without forming a bridge between neighboring storage nodes. CONSTITUTION: An interlayer dielectric and a protecting layer(19) are sequentially formed on a semiconductor substrate(1). A plurality of storage node plugs(21) are formed through the protecting layer and the interlayer dielectric. A molding layer(23) having an etch selectivity ratio for the protecting layer is formed on the resultant structure. A plurality of pre-storage node holes are formed by selectively patterning the molding layer for exposing each storage node plug. Then, enlarged storage node holes are formed by carrying out a cleaning process on the exposed storage node plugs. A plurality of storage nodes(27) are formed in the enlarged storage node holes for contacting the cleaned storage node plugs. Preferably, the protecting layer and the molding layer are made of a silicon nitride layer and a silicon oxide layer, respectively.