| 摘要 |
The device has a source region, a drain region with 2 drain sections with different doping levels, drain metallization electrically connected to the first drain section, a channel region, a gate oxide, a gate above this and the channel region, an insulating layer covering the gate and a screening element in the insulating layer above the drain region between the gate and drain metallization and further from the substrate surface than the gate. The device has a source region (116) formed in a substrate (100,106), a drain region (110) with first and second drain sections with first and lower second doping concentrations and drain metallization (124) above the drain region electrically connected to the first drain section, a channel region (118), a gate oxide (120) above it, a gate (122) above this and the channel region, an insulating layer (132) covering the gate and a screening element (140) in the insulating layer above the drain region between the gate and drain metallization and further from the substrate surface than the gate. |
