SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattene d so that an arithmetical mean deviation of surface R a is not greater than 0.15nm, preferably, 0.09nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxyge n radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.