| 摘要 |
A distributed feedback semiconductor laser includes a semiconductor substrate (11), first and second diffraction grating layers (12a, 12b), a connecting layer (13), an active layer (18) and a cladding layer (19). The first and second diffraction grating layers (12a, 12b) are provided above the semiconductor substrate (11), and spaced from each other in an output direction of a beam (23). The connecting layer (13) is flat and sandwiched between the first and second diffraction grating layers (12a, 12b). The active layer (18) is disposed above or below the first and second diffraction grating layers (12a, 12b) and the connecting layer (13). The cladding layer (19) is disposed above the active layer (18) or above the first and second diffraction grating layers (12a, 12b) and the connecting layer (f). A diffraction grating (16) including the first and second diffraction grating layers (12a, 12b) has a plurality of slits (15) penetrating from an upper surface to a lower surface and perpendicular to the output direction of the beam (23). The connecting layer (13) is formed from two layers (13a, 13b) grown epitaxially in a direction perpendicular to the output direction of the beam (23). One (13a) of the two layers is formed of the same material as the first and second diffraction grating layers. <IMAGE> |
