发明名称 |
Nonvolatile memory device with simultaneous read/write |
摘要 |
<p>A nonvolatile memory device with simultaneous read/write has a memory array (2) formed by a plurality of cells (7) organized into memory banks (8), and a plurality of first and second sense amplifiers (15, 16). The device further has a plurality of R/W selectors (20) associated to respective sets of cells (7) and connecting the cells (7) of the respective sets of cells (7) alternately to the first sense amplifiers (15) and to the second sense amplifiers (16). <IMAGE></p> |
申请公布号 |
EP1424699(A2) |
申请公布日期 |
2004.06.02 |
申请号 |
EP20030104345 |
申请日期 |
2003.11.24 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
BELLINI, ANDREA;SALI, MAURO;MAGNAVACCA, ALESSANDRO;LISI, CARLO |
分类号 |
G11C16/26;G11C16/34;(IPC1-7):G11C16/26 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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