| 摘要 |
PURPOSE: A growth apparatus of silicon single crystal ingot is provided to be capable of minimizing the temperature difference between the center portion of the ingot and its edge portion for improving the uniformity of the ingot. CONSTITUTION: A growth apparatus of silicon single crystal ingot is provided with a chamber(10), a quartz crucible(20), a graphite crucible(30) for enclosing and supporting the lower portion of the quartz crucible, and a pedestal(40) for supporting and moving the graphite crucible. The growth apparatus further includes a graphite heater(200) spaced apart from the lateral portion of the graphite crucible in the chamber for generating heat according to the supply of electricity and a heat shielding structure(50) spaced apart from the graphite heater in the chamber. At this time, the first portion of the graphite heater has smaller resistance than that of its second portion.
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