Formation of vacancies in semiconductor, useful for LEDs or laser diodes, by depositing dielectric layer on gallium arsenide structure, heating and removing this layer

摘要

Dielectric layer is deposited on a gallium nitride (GaN) based structure, the resulting structure is heated and the dielectric layer is then removed. Forming vacancies in a III-V semiconductor comprises : (a) depositing a dielectric layer on a GaN-based structure: (b) heating the structure obtained in step (1) at a temperature of 700-1300[deg]C for a period ranging from 5 seconds to 4 hours; and (c) removing the dielectric layer. An independent claim is also included for a structure obtained by the above method, containing a concentration of holes of at least 5 E 17.cm-3>, at a hole mobility of ca. 10 cm2>/Vs.