| 摘要 |
An MRAM includes a magneto resistive element (35), which has a record layer (37) and a reference layer (38) disposed to sandwich a tunnel barrier film (36) and is configured to store data in the record layer (37). An electric current drive line (56) is disposed to selectively apply a magnetic field to the magneto resistive element (35). The record layer (37) has a first ferromagnetic layer while the reference layer (38) has a second ferromagnetic layer. Retentivity of retaining a magnetization direction of the second ferromagnetic layer is smaller than retentivity of retaining a magnetization direction of the first ferromagnetic layer, against a magnetic field applied to the magneto resistive element (35) by the electric current drive line (56). <IMAGE> |
