| 摘要 |
The present invention generally relates to a semiconductor device and more specific to a semiconductor device for detecting and adjusting threshold voltage variations of an integrated semiconductor device implemented in sub-micron technology, i.e. transistors, and a method related thereto. To adjust the threshold voltage variation induced by the fabrication process in the semiconductor a comparison between a device under test and a fixed voltage value is proposed. According to the invention, a constant current is injected in the transistor and the gate-to-source potential is fixed by a bias voltage. According to the comparison result, a well potential is provided to the semiconductor device to adjust the threshold voltage. <IMAGE>
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