| 摘要 |
PURPOSE: A planarization method for an interlayer of a semiconductor device is provided to be capable of decreasing the capacitance of the device and reducing plasma damage. CONSTITUTION: A plurality of metal lines(23) are formed on a semiconductor wafer(21). An SOG(Spin On Glass) based thin film(25) is formed on the entire surface of the resultant structure for completely filling the gap between the metal lines. At this time, an FOx thin film is used as the SOG based thin film. An FSG(Fluoro-Silicate Glass) thin film(27) is formed on the FOx thin film. Then, a planarization process is carried out on the FSG thin film. Preferably, the metal line is made of Al or the alloy of Al and Cu. Preferably, the FOx layer has a thickness of 500-5000 angstrom.
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