发明名称 |
Optimized blocking impurity placement for SiGe HBTs |
摘要 |
A high performance SiGe HBT that has a SiGe layer with a peak Ge concentration of at least approximately 20% and a boron-doped base region formed therein having a thickness. The base region includes diffusion-limiting impurities substantially throughout its thickness, at a peak concentration below that of boron in the base region. Both the base region and the diffusion-limiting impurities are positioned relative to a peak concentration of Ge in the SiGe layer so as to optimize both performance and yield.
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申请公布号 |
US6744079(B2) |
申请公布日期 |
2004.06.01 |
申请号 |
US20020683983 |
申请日期 |
2002.03.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JAGANNATHAN BASANTH;JOSEPH ALVIN J.;LIU XUEFENG;SCHONENBERG KATHRYN T.;WUTHRICH RYAN W. |
分类号 |
H01L21/331;H01L29/10;H01L29/161;H01L29/737;(IPC1-7):H01L31/072 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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