SEMICONDUCTOR DEVICE, DISPLAY DEVICE, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME, CONCERNED WITH PROVIDING STRUCTURE CAPABLE OF PREVENTING WATER AND OXYGEN FROM INFILTRATING INTO DEVICE FORMATION LAYER

摘要

PURPOSE: A semiconductor device, a display device, a light emitting device, and a method for manufacturing the same are provided to maintain device characteristics by preventing water and oxygen from infiltrating into a device formation layer from outside. CONSTITUTION: A semiconductor device includes a device formation layer(101) including a plurality of thin film transistors. The device formation layer is covered by a fluoroplastic film(102,103). A thermal conductive layer is formed in contact with a surface of the device formation layer. The thermal conductive layer includes one selected from the group consisting of aluminum nitride, aluminum nitride oxide, and DLC(diamond like carbon). A semiconductor layer over a first insulating film includes a source region, a drain region, and a channel formation region. A gate electrode is adjacent to the semiconductor substrate and includes a gate insulator therein.