发明名称 |
Nitride semiconductor light emitting device |
摘要 |
A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.
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申请公布号 |
US6744064(B2) |
申请公布日期 |
2004.06.01 |
申请号 |
US20010776846 |
申请日期 |
2001.02.06 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
LEE SUNG-NAM;PARK YONG-JO;NAM OK-HYUN;LEE IN-HWAN;LEE WON-SEOK;CHO SHI-YUN;SONE CHEOL-SOO |
分类号 |
H01S5/343;B82Y20/00;H01S5/20;H01S5/323;H01S5/34;(IPC1-7):H01L29/06 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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