| 摘要 |
A photomask for aberration measurement of the present invention comprises a substrate that allows exposure light to pass through, a plurality of aperture patterns for measurement that are formed on the top surface of substrate in a plurality of measurement pattern formation regions, a light blocking film that is formed in the measurement pattern formation regions on the rear surface of substrate and that has a rear surface aperture pattern for substantially differentiating the respective incident angles of the exposure light to plurality of aperture patterns for measurement and a plurality of reference patterns that is formed in a single, or in a plurality, of reference pattern formation region(s) on the top surface of substrate, wherein the rear surface of substrate in the reference pattern formation region(s) is formed so that the respective incident angles of the exposure light to plurality of reference patterns becomes the substantially the same. |
