| 摘要 |
PURPOSE: A ridge waveguide type semiconductor laser diode having an improve ridge structure is provided to enhance the reliability and lengthen the lifetime by preventing troubles of laser characteristics. CONSTITUTION: An active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer(14). A ridge part(14a) is formed on the p-type semiconductor layer in order to form a waveguide. A protective insulating layer(17,18) is used for covering partially the ridge part in order to expose partially a top face of the ridge part. A p-side ohmic electrode(15) is in contact with the exposed portion of the ridge part. A p-side pad electrode(19) is electrically connected to the p-side ohmic electrode. An intermediate layer is formed between the p-side ohmic electrode and the p-side pad electrode in order to cover partially the ridge part exposed from the protective insulating layer. |
