发明名称 |
High voltage switch circuitry |
摘要 |
The present invention relates to a method of setting a state of a one-time programmable memory device having at least one memory cell with a thin gate-ox fuse element having an oxide of about 2.5 nm thick or less using a high voltage switch. The method comprises switching in a high programming voltage into the memory cell using such high voltage switch, setting the state of the thin gate-ox fuse element.
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申请公布号 |
US6744660(B2) |
申请公布日期 |
2004.06.01 |
申请号 |
US20030418254 |
申请日期 |
2003.04.17 |
申请人 |
BROADCOM CORPORATION |
发明人 |
SMITH DOUGLAS D.;BUER MYRON;RADIEDDINE BASSEM |
分类号 |
G11C17/16;H01L23/525;(IPC1-7):G11C11/00 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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