发明名称 |
Negative differential resistance reoxidized nitride silicon-based photodiode and method |
摘要 |
A photodiode that exhibits a photo-induced negative differential resistance region upon biasing and illumination is described. The photodiode includes an N+ silicon substrate, a silicon nitride layer formed on the N+ silicon substrate, a reoxidized nitride layer formed on the silicon nitride layer and a N+ polysilicon layer formed on at least a portion of the reoxidized nitride layer.
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申请公布号 |
US6743655(B2) |
申请公布日期 |
2004.06.01 |
申请号 |
US20020205527 |
申请日期 |
2002.07.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN FEN;DUFRESNE ROGER AIME;LI BAOZHEN;STRONG ALVIN WAYNE |
分类号 |
H01L31/0248;H01L31/028;H01L31/0352;(IPC1-7):H01L21/00 |
主分类号 |
H01L31/0248 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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