发明名称 Low Vt transistor substitution in a semiconductor device
摘要 Performance of an integrated circuit design, whether embodied as a design encoding or as a fabricated integrated circuit, can be improved by selectively substituting low Vt transistors in a way that prioritizes substitution opportunities based on multi-path timing analysis and evaluates such opportunities based on one or more substitution constraints. By valuing, in a prioritization of substitution opportunities, contributions for all or substantially all timing paths through the substitution opportunity that violate a max-time constraint, repeated passes through a timing analysis phase can be advantageously avoided or limited. In addition, by recognizing one or more constraints on actual low Vt substitutions, particular noise-oriented constraints, the scope of post substitution design analysis can be greatly reduced. In some realizations, substitutions are performed so long as a leakage current budget is not expended. As a result, integrated circuit designs prepared in accordance with the described techniques may exhibit substantial cycle time improvements through judicious selection of gate instances for substitution. In some realizations, improved yields of high grade parts may result.
申请公布号 US6745371(B2) 申请公布日期 2004.06.01
申请号 US20020098756 申请日期 2002.03.15
申请人 SUN MICROSYSTEMS, INC. 发明人 KONSTADINIDIS GEORGE K.;MA HARRY;SMITH ALAN P.;WU KEVIN J.
分类号 G06F17/50;(IPC1-7):G06F17/50 主分类号 G06F17/50
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