| 发明名称 |
Method and structure for nitride based laser diode arrays on an insulating substrate |
| 摘要 |
A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
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| 申请公布号 |
US6744800(B1) |
申请公布日期 |
2004.06.01 |
| 申请号 |
US19980223112 |
申请日期 |
1998.12.30 |
| 申请人 |
XEROX CORPORATION |
发明人 |
KNEISSL MICHAEL A.;PAOLI THOMAS L.;BOUR DAVID P.;JOHNSON NOBLE M.;WALKER JACK |
| 分类号 |
H01L21/20;H01L21/68;H01L27/15;H01L33/00;H01S5/02;H01S5/343;H01S5/40;(IPC1-7):H01S5/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
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