| 摘要 |
A nonvolatile memory includes at least a first electrode ( 71 ) and a second electrode ( 72 ) provided on a substrate, the first and second electrodes being separated from each other, and a conductive organic thin film ( 73 ) for electrically connecting the first and second electrodes. The conductive organic thin film ( 73 ) has a first electric state in which it exhibits a first resistance, and a second electric state in which it exhibits a second resistance. A first threshold voltage for a transition from the first electric state to the second electric state, and a second threshold voltage for a transition from the second electric state to the first electric state are different from each other, and either the first electric state or the second electric state is maintained a voltage in a range between the first threshold voltage and the second threshold voltage. |
