发明名称 Semiconductor memory module with low current consumption
摘要 A semiconductor memory module with a changeover device by which an internal voltage supply circuit can be switched on or off in a simple manner. The changeover device has two evaluation circuits, one evaluation circuit being used for switching on the voltage supply and the second evaluation circuit being used for switching off the voltage supply. In this way, the two evaluation circuits can be optimized with regard to functionality, circuit layout and current consumption.
申请公布号 US6744686(B2) 申请公布日期 2004.06.01
申请号 US20020301398 申请日期 2002.11.21
申请人 INFINEON TECHNOLOGIES AG 发明人 BORST THOMAS
分类号 G11C5/14;(IPC1-7):G11C7/00 主分类号 G11C5/14
代理机构 代理人
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