| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE PREVENTING BREAKDOWN OF THE PATTERNS |
| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form a space pattern or a tiny line pattern while preventing breakdown of the patterns by performing etching using a spin-on glass film as a mask. CONSTITUTION: A lower film is formed on a substrate(2). A resist pattern(18) is formed on the lower film. A spin on glass film is formed on an exposed portion of the lower film. The resist pattern is removed. The lower film is etched by using the spin-on glass film as a mask. An upper resist pattern is formed on the spin-on glass film between performing a resist pattern removing operation and a spin-on glass film etching operation.
|
| 申请公布号 |
KR20040045276(A) |
申请公布日期 |
2004.06.01 |
| 申请号 |
KR20030051366 |
申请日期 |
2003.07.25 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
YAMAGUCHI ATSUMI |
| 分类号 |
G03F7/40;H01L21/027;H01L21/033;H01L21/28;H01L21/3213;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
