METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING CONSTANT ASPECT RATIO

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to keep an aspect ratio of a capacitor electrode metal film by using a patterning mask made of platinum(Pt) and iridium(Ir). CONSTITUTION: A capacitor electrode metal film is formed on a base layer. The capacitor electrode metal film is mainly made of one of Pt and Ir. The first mask film mainly made of one of rubidium(Ru) and Osmum(Os) on the capacitor electrode metal film. The first mask film(8) is selective opened. The capacitor electrode metal film is selectively etched by being exposed and volatilized at an opening of the first mask film to a predetermined gas atmosphere while heating the capacitor electrode metal film. The first mask film is removed.