| 摘要 |
In a thermoelectric generator or Peltier arrangement having a thermoelectrically active semiconductor material constituted by a plurality of metals or metal oxides the thermoelectrically active material is selected from a p- or n-doped semiconductor material constituted by a ternary compound of the general formula (I)withMe=Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu or Ag,S<A>, S<B>=B, C, Si, Ge, Sb, Se or Te,where S<A >and S<B >respectively come from different groups of the periodic table,x, y, z independently of one another have values from 0.01 to 1,and where the proportion by weight of S<A >and S<B >together is no more than 30%, expressed in terms of the total semiconductor material,except for ternary compounds constituted by AlB12 and SiB6,or a mixed oxide of the general formula (II)withMe=Fe, Cu, V, Mn, Sn, Ti, Mo, Wn=integer from 1 to 6,a=1 or 2,f=number from 0.2 to 5,k=number from 0,01 to 2,u+v+w+x=1.
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