发明名称 Planarization process for semiconductor substrates
摘要 A method of manufacturing semiconductor devices using an improved chemical mechanical planarization process for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved chemical mechanical planarization process includes the formation of a flat planar surface from a deformable coating on the surface of the wafer filling in between the surface irregularities prior to the planarization of the surface through a chemical mechanical planarization process.
申请公布号 US6743724(B2) 申请公布日期 2004.06.01
申请号 US20010832560 申请日期 2001.04.11
申请人 发明人
分类号 H01L21/304;H01L21/3105;(IPC1-7):H01L21/302 主分类号 H01L21/304
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