| 摘要 |
A semiconductor laser device improves reliability during high-power oscillation. An n-type GaAs buffer layer, an n-type In0.48Ga0.52P lower cladding layer, an n-type or i-type Inx1Ga1-x1As1-y1Py1 optical waveguide layer, an i-type GaAs1-y2Py2 tensile-strain barrier layer, an Inx3Ga1-3As1-y3Py3 compressive-strain quantum-well active layer, an i-type GaAs1-y2Py2 tensile-strain barrier layer, a p-type or i-type Inx1Ga1-x1As1-y1Py1 upper optical waveguide layer, a p-type In0.48Ga0.52P first upper cladding layer, a GaAs etching stop layer, a p-type In0.48Ga0.52P second upper cladding layer, and a p-type GaAs contact layer are grown on a plane of an n-type GaAs substrate. Two ridge trenches are formed on the resultant structure, and current non-injection regions are formed by removing the p-type GaAs contact layer in portions extending inwardly by 30 mum from cleavage positions of edge facets of the resonator on a top face of a ridge portion between the ridge trenches.
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