CMOS DEVICE STRUCTURE WITH IMPROVED PFET GATE ELECTRODE, PARTICULARLY CONCERNED WITH NFET OR PFET OF HIGH CAPABILITY FORMED ON THE SAME SUBSTRATE

摘要

PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) device structure with an improved PEFT gate electrode is provided to improve the structure of PFET device by maintaining the characteristics of the NFET arranged on the same substrate. CONSTITUTION: A dielectric layer(4) is provided on a substrate. The first and second stacks(3) are arranged on the dielectric layer. The first stack includes the first silicon layer disposed on the dielectric layer, a silicon germanium layer disposed on the first silicon layer, the second silicon layer disposed on the silicon germanium layer, and the third silicon layer disposed on the second silicon layer. The second stack includes the first silicon layer disposed on the dielectric layer, and the second silicon layer disposed on the first silicon layer. The first silicon layer of the first stack includes polysilicon, and the first silicon layer of the second stack includes polysilicon.