METHOD FOR CONTROLLING THICKNESS OF SOI LAYER OF SOI WAFER

摘要

PURPOSE: A method for controlling thickness of an SOI layer of an SOI wafer is provided to form the SOI wafer having an ultra thin film or a nano SOI layer by controlling the thickness of the SOI layer. CONSTITUTION: An SOI wafer is prepared(S1). A first thermal process is performed to process the SOI wafer under the atmosphere of hydrogen gas(S2). The wafer is etched by using the etching solution including the NH4OH, H2O2, and deionized water after the SOI wafer is processed by the first thermal process(S3). A second thermal process for the etched SOI wafer is performed under the atmosphere of the hydrogen gas(S4). The SOI wafer is cleaned by using the deionized water after the SOI wafer is processed by the second thermal process(S5).