发明名称 PHOTO DETECTOR USING TFT
摘要 PURPOSE: A photo detector using a TFT is provided to enhance the degree of integration by improving lowering phenomena of the space efficiency due to a gap between a capacitor electrode and a gate electrode. CONSTITUTION: A photo detector using a TFT includes a sensor TFT, a storage capacitor, and a switching TFT. The sensor TFT(120) is used for generating the amount of the current corresponding to the received amount of light. The storage capacitor(130) is used for storing charges of the current generated by the sensor TFT. The switching TFT(140) is used for performing a switching operation to discharge the storage charges of the storage capacitor to the outside. A sensor gate electrode(125) of the sensor TFT, one of capacitor electrodes(131,132) of the storage capacitor, and a switch gate electrode(145) of the switching TFT are formed with a single layer.
申请公布号 KR20040044588(A) 申请公布日期 2004.05.31
申请号 KR20020072639 申请日期 2002.11.21
申请人 JSC & I 发明人 KIM, HYEONG JUN;LEE, CHEOL U;SEO, JU WON
分类号 H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L29/786
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