发明名称 |
DUAL-SOURCE, SINGLE-CHAMBER METHOD AND APPARATUS FOR SPUTTER DEPOSITION |
摘要 |
The present invention relates to a dual-source, single-chamber method and apparatus for epitaxial sputter deposition of epilayers and high quality films. The apparatus for performing the method includes a first sputtering source (2) for the sputtering of an epitaxial film on a substrate (6). A second sputtering source 4 is for the sputtering of reactive materials to create a getter on a cryogenic shroud (8). The first sputtering source (4) and the substrate (6) are surrounded by the cryogenic shroud (8).
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申请公布号 |
KR20040044994(A) |
申请公布日期 |
2004.05.31 |
申请号 |
KR20047004398 |
申请日期 |
2002.09.27 |
申请人 |
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发明人 |
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分类号 |
C23C14/34;C23C14/56;C30B23/02;H01J37/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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